5G 电信

5G 电信

5G 网络的精准同步

时脉同步一直是无线通讯中重要的一个环节,在 5G 高速传输时代更是重视低延迟技术。希华致力于提供满足 5G 技术需求的最先进的频率控制解决方案,具备低相位杂讯、低抖动和高精准等特性,以确保通讯稳定、精准同步和最佳性能表现,广泛应用在 5G 基地台与小型基地台。

高精准度 & 高稳定度

Greater accuracy and stability

低延迟 & 低杂讯及抖动

Low latency & Low Phase Noise and Jitter

高频

High Frequency

Oscillator

Differential Output Oscillator

Image
Series
Package Size
(mm)
Nominal Frequency
Frequency Stability
Temperature Range
Output Waveform
Supply Volatage
Datasheet
  • Oscillator
    OSC8A
    3.2 x 2.5 x 0.9
    13.5 - 200MHz
    ±25ppm
    ±50ppm
    -40 ~ +85℃
    -40 ~ +125℃
    LVPECL
    2.5 / 3.3
  • Oscillator
    OSC8A
    3.2 x 2.5 x 0.9
    13.5 - 200MHz
    ±25ppm
    ±50ppm
    -40 ~ +85℃
    -40 ~ +125℃
    LVDS
    2.5 / 3.3
  • Oscillator
    OSC8A
    3.2 x 2.5 x 0.9
    13.5 - 200MHz
    ±25ppm
    ±50ppm
    -40 ~ +85℃
    -40 ~ +125℃
    HCSL
    2.5 / 3.3

Oscillator

Low Jitter Oscillator

Image
Series
Package Size
(mm)
Nominal Frequency
Frequency Stability
Temperature Range
Output Waveform
Supply Volatage
Datasheet
  • OSC81
    OSC81
    3.2 x 2.5 x 0.9
    10 - 50MHz
    ±50ppm
    ±100ppm
    -40 ~ +105℃
    -40 ~ +125℃
    C-MOS
    1.8 / 2.5 / 3.3

TCXO

Clipped-sine Output TCXO

Image
Series
Package Size
(mm)
Nominal Frequency
Frequency Stability
Temperature Range
Output Waveform
Supply Volatage
Datasheet
  • TXO01
    TXO01
    1.6 x 1.2 x 0.55
    13 - 52MHz
    ±0.5ppm
    -40 ~ +85℃
    Clipped Sinewave
    1.8 to 3.3
  • TXO97
    TXO97
    2.0 x 1.6 x 0.8
    13 - 52MHz
    ±0.5ppm
    -40 ~ +85℃
    Clipped Sinewave
    1.8 to 3.3
  • TXO91
    TXO91
    2.5 x 2.0 x 0.8
    10 - 52MHz
    ±0.5ppm
    -40 ~ +85℃
    Clipped Sinewave
    1.8 to 3.3

VCXO

CMOS Output VCXO

Image
Series
Package Size
(mm)
Nominal Frequency
Frequency Stability
Temperature Range
Output Waveform
Supply Volatage
Datasheet
  • VCXO
    VCX00
    3.2 x 2.5 x 0.9
    1.5 - 54MHz
    ±30ppm
    ±50ppm
    -40 ~ +85℃
    C-MOS
    1.8 / 2.5 / 3.3
  • VCXO
    VCX92
    7.0 x 5.0 x 1.6
    1.5 - 54MHz
    ±30ppm
    ±50ppm
    -40 ~ +85℃
    C-MOS
    1.8 / 2.5 / 3.3

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